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| FLX257XV GaAs FET & HEMT Chips FEATURES * * * * High Output Power: P1dB = 33.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability 95 40 (Unit: m) DESCRIPTION The FLX257XV chip is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Rating 15 -5 Tc = 25C 15.0 -65 to +175 175 Unit V V W C C Gate Gate Gate Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with gate resistance of 200. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Power-added Efficiency Thermal Resistance Symbol IDSS gm Vp VGSO P1dB G1dB add Rth Channel to Case VDS = 10V IDS 0.6IDSS f = 10GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 600mA VDS = 5V, IDS = 50mA IGS = -50A Min. -1.0 -5 32.5 6.5 Limit Typ. Max. 1000 600 -2.0 33.5 7.5 31 8 1500 -3.5 10 Unit mA mS V V dBm dB % C/W Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.4 October 2004 1 56 40 Drain Drain Drain Drain FLX257XV GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Total Power Dissipation (W) Drain Current (mA) 16 12 8 4 1000 750 500 250 VGS =0V -0.5V -1.0V -1.5V -2.0V 0 50 100 150 200 2 4 6 8 10 Case Temperature (C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER Output Power (dBm) VDS=10V 35 IDS0.6IDSS f = 10GHz 33 31 29 27 25 23 add Pout 40 30 20 10 add (%) 17 19 21 23 25 27 Input Power (dBm) 2 FLX257XV GaAs FET & HEMT Chips S-PARAMETERS VDS = 10V, IDS = 600mA FREQUENCY (MHZ) 100 500 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 S11 MAG .995 .963 .953 .951 .951 .953 .955 .957 .959 .961 .963 .964 .966 .967 .968 .969 .970 .971 .972 .972 S21 ANG -35.2 S12 ANG 161.0 117.0 98.0 80.7 69.1 59.4 50.6 42.7 35.5 28.9 22.9 17.5 12.6 8.3 4.4 1.0 -1.9 -4.4 -6.4 -7.8 S22 ANG 72.1 32.2 18.4 11.8 11.3 13.3 16.9 22.1 28.3 35.2 42.0 48.3 53.8 58.4 62.1 65.1 67.5 69.3 70.8 72.0 MAG 14.385 7.909 4.423 2.259 1.487 1.089 .846 .681 .562 .472 .402 .345 .300 .262 .230 .202 .179 .158 .140 .124 MAG .007 .020 .022 .022 .022 .021 .020 .019 .019 .019 .020 .021 .023 .025 .027 .029 .032 .034 .037 .039 MAG .390 .516 .552 .579 .607 .638 .671 .704 .735 .763 .789 .811 .831 .849 .864 .878 .889 .900 .909 .916 ANG -171.2 -168.2 -170.1 -169.1 -167.1 -165.5 -164.6 -164.2 -164.2 -164.5 -165.0 -165.7 -166.4 -167.2 -168.0 -168.8 -169.6 -170.3 -171.0 -171.7 -115.7 -145.3 -162.8 -169.0 -172.4 -174.6 -176.3 -177.6 -178.8 -179.8 179.3 178.4 177.6 176.8 176.1 175.4 174.7 174.0 173.3 Gate Drain NOTE:* The data includes bonding wires. n: number of wires n=8 (0.2mm length, 25m Dia Au wire) n=8 (0.2mm length, 25m Dia Au wire) 3 FLX257XV GaAs FET & HEMT Chips CHIP OUTLINE 106 60 106 128 (Unit: m) 95 40 (Unit: m) 70 40 Drain Drain Drain Drain 56 44 Gate Gate Gate 60 60 44 Source electrodes are connected to the PHS by Via-HOLE Via-Hole Die Thickness: 6020m 177030 For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4 48030 |
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